Samsung to Develop Fast LLW DRAM Memory with Low Power Consumption

Samsung is developing a new type of memory called Low Latency Wide I/O (LLW) DRAM, featuring high bandwidth, minimal latency and low power consumption. The company primarily sees the use of this new memory in artificial intelligence systems based on large language models (LLMs), although it will also be suitable for other workloads, including clients.

Characteristics of LLW DRAM

Samsung’s LLW DRAM is a low-power memory with wide I/O capabilities, minimal latency and a bandwidth of 128 GB/s per module (or stack), comparable to the combination of DDR5-8000 memory and a 128-bit bus. One of the key features of Samsung’s LLW DRAM is its low power consumption – 1.2 pJ/bit, although the company did not reveal the data transfer speed at which this value was measured.

Potential Application of LLW DRAM

While Samsung has not yet disclosed technical details about LLW DRAM, it’s worth noting that the company has been developing wide-interface memories like, GDDR6W, for some time. It’s likely that Samsung is combining the capacities of several such DRAM modules that are integrated into a single package, utilizing Fan-Out Wafer-Level Packaging (FOWLP) technology to extend the interface’s bandwidth and reduce power consumption.

Samsung standardized its GDDR6W memory in the second quarter of 2022 and intended to use it in artificial intelligence systems, high-performance computing accelerators, and client PCs. It’s likely that LLW DRAM will be used in peripheral computing devices for artificial intelligence systems, such as smartphones, laptops, and perhaps automotive systems.

Launch Timelines

Samsung rarely discloses when its promising technologies will reach the market, so the timing of LLW DRAM’s appearance in real devices is unclear. Yet, since Samsung has already unveiled details about the expected performance of this new technology, the development of LLW DRAM may nearly be complete.

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