Samsung to produce advanced 3nm chips with GAA-transistors for AMD

Samsung has announced an expansion of its strategic partnership with US company Advanced Micro Devices (AMD) in developing pioneering 3-nanometer chip production technology. The South Korean tech giant aims to overtake its main competitor, Taiwanese semiconductor contract manufacturer TSMC, by strengthening ties with AMD.

This partnership will allow both companies to pool resources in the development of next-generation chip solutions, which will be used in high-performance computing systems, data centers, smartphones, and other electronic devices.

According to the Korean news agency KED Globall, the collaboration allows Samsung, the world’s largest memory chip manufacturer, to access AMD’s advanced chip architecture developments. AMD, known for creating microprocessors and graphic processors, will benefit from Samsung’s manufacturing capabilities using the newest 3-nm Gate-All-Around (GAA) transistor technology.

GAA technology enables the production of chips with a record transistor density and improved performance characteristics. Compared to the prior generation of 5-nm chips, the 3-nm GAA chips offer 30% performance improvement, 50% reduction in energy consumption, and a 45% decrease in chip size. Currently, Samsung is the solitary manufacturer worldwide to have commenced the commercial production of 3-nm GAA process, surpassing its main competitor TSMC.

By widening its collaboration with AMD, Samsung aims to boost its market share in contract chip manufacturing and narrow the gap with TSMC. Samsung currently controls around 17% of this market, while TSMC holds over 50%. Samsung plans to initiate mass production of 2-nm chips using GAA technology by 2025, reinforcing its leadership in the semiconductor technology sector.

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